丝印：ED7；Package：SOT-23；16-Bit ANALOG-TO-DIGITAL CONVERTER with Onboard Reference

FEATURES COMPLETE DATA ACQUISITION SYSTEM IN A TINY SOT23-6 PACKAGE ONBOARD REFERENCE: Accuracy: 2.048V ±0.05% Drift: 5ppm/°C ONBOARD PGA ONBOARD OSCILLATOR 16-BITS NO MISSING CODES INL: 0.01% of FSR max CONTINUOUS SELF-CALIBRATION SINGLE-CYCLE CONVERSION PROGRAMMABLE DATA RATE

文件：791.57 Kbytes 页数：23 Pages

TI

德州仪器

丝印：ED7；Package：SOT-23；16-Bit ANALOG-TO-DIGITAL CONVERTER with Onboard Reference

FEATURES COMPLETE DATA ACQUISITION SYSTEM IN A TINY SOT23-6 PACKAGE ONBOARD REFERENCE: Accuracy: 2.048V ±0.05% Drift: 5ppm/°C ONBOARD PGA ONBOARD OSCILLATOR 16-BITS NO MISSING CODES INL: 0.01% of FSR max CONTINUOUS SELF-CALIBRATION SINGLE-CYCLE CONVERSION PROGRAMMABLE DATA RATE

文件：791.57 Kbytes 页数：23 Pages

TI

德州仪器

丝印：ED7；Package：SOT-23；16-Bit ANALOG-TO-DIGITAL CONVERTER with Onboard Reference

FEATURES COMPLETE DATA ACQUISITION SYSTEM IN A TINY SOT23-6 PACKAGE ONBOARD REFERENCE: Accuracy: 2.048V ±0.05% Drift: 5ppm/°C ONBOARD PGA ONBOARD OSCILLATOR 16-BITS NO MISSING CODES INL: 0.01% of FSR max CONTINUOUS SELF-CALIBRATION SINGLE-CYCLE CONVERSION PROGRAMMABLE DATA RATE

文件：791.57 Kbytes 页数：23 Pages

TI

德州仪器

丝印：ED7；Package：SOT-23；16-Bit ANALOG-TO-DIGITAL CONVERTER with Onboard Reference

FEATURES COMPLETE DATA ACQUISITION SYSTEM IN A TINY SOT23-6 PACKAGE ONBOARD REFERENCE: Accuracy: 2.048V ±0.05% Drift: 5ppm/°C ONBOARD PGA ONBOARD OSCILLATOR 16-BITS NO MISSING CODES INL: 0.01% of FSR max CONTINUOUS SELF-CALIBRATION SINGLE-CYCLE CONVERSION PROGRAMMABLE DATA RATE

文件：791.57 Kbytes 页数：23 Pages

TI

德州仪器

丝印：ED7509；Package：TO-263；80A 75V N-channel Enhancement Mode Power MOSFET

Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1

文件：916.56 Kbytes 页数：11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：ED7509；Package：TO-263；80A 75V N-channel Enhancement Mode Power MOSFET

Description These N-channel enhancement mode power MOSFETS Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. Features ● Low On Resistance ● Low Gate Charge ● Fast Switching ● Low Reverse Transfer Capacitances ● 1

文件：916.56 Kbytes 页数：11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Intel® Atom® Processors X Series Fanless Embedded System

文件：943.49 Kbytes 页数：4 Pages

DFI

友通资讯

Intel® Atom® Processors X Series Fanless Embedded System

文件：943.49 Kbytes 页数：4 Pages

DFI

友通资讯

Dual SCR/Diode Isolated modules

文件：594.99 Kbytes 页数：10 Pages

POWEREX

Dual SCR/Diode Isolated modules

文件：594.99 Kbytes 页数：10 Pages

POWEREX