ECW-F4243RHB

Package：径向；包装：卷带（TR） 类别：电容器 薄膜电容器 描述：CAP FILM 0.024UF 3% 400VDC RAD

FDD4243

40VP-ChannelPowerTrench짰MOSFET

FDD4243

40VP-ChannelPowerTrenchMOSFET-40V,-14A,44mohm

Features ■TyprDS(on)=36mΩatVGS=-10V,ID=-6.7A ■TyprDS(on)=48mΩatVGS=-4.5V,ID=-5.5A ■TypQg(TOT)=21nCatVGS=-10V ■HighperformancetrenchtechnologyforextremelylowrDS(on) ■RoHSCompliant ■QualifiedtoAECQ101 Applications ■Inverter ■

FDD4243

P-ChannelMOSFET

Features HighperformancetrenchtechnologyforextremelylowrDS(on) RoHSCompliant VDS(V)=-40V RDS(ON)

FDD4243

P-channelEnhancementModePowerMOSFET

Features VDS=-40V,ID=-40A RDS(ON)

FDD4243

P-ChannelMOSFET

Features HighperformancetrenchtechnologyforextremelylowrDS(on) RoHSCompliant VDS(V)=-40V RDS(ON)

FDD4243

P-ChannelEnhancementModeMOSFET

Features Vos=-40VID=-30A RDS(ON)

FDD4243

P-Channel40V(D-S)MOSFET

ISL4243E

Providinghigh-performancesolutionsforeverylinkinthesignalchain

ISL4243E

QFNPackaged,짹15kVESDProtected,2.7Vto5.5V,10Nanoamp,250kbps,RS-232Transmitters/Receivers

QFNPackaged,±15kVESDProtected,+2.7Vto+5.5V,10Nanoamp,250kbps,RS-232Transmitters/Receivers Intersil’sISL4241E,ISL4243Edevicesare2.7Vto5.5VpoweredRS-232transmitters/receiverswhichmeetElA/TIA-232andV.28/V.24specifications,evenatVCC=3.0V.Additionally,theyprovide±15