丝印：09CXXF；Package：SOT23-5；BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR

文件：491.59 Kbytes 页数：10 Pages

E-CMOS

飞虹高科

BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR

文件：491.59 Kbytes 页数：10 Pages

E-CMOS

飞虹高科

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -90A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：353.25 Kbytes 页数：2 Pages

ISC

无锡固电

1.8V, Ultra-Low Power, DirectDrive Video Filter Amplifiers

文件：1.87697 Mbytes 页数：15 Pages

Maxim

美信