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EBE21FD4AGFD-6E-E中文资料美光科技数据手册PDF规格书

EBE21FD4AGFD-6E-E
厂商型号

EBE21FD4AGFD-6E-E

功能描述

2GB Fully Buffered DIMM

文件大小

210.35 Kbytes

页面数量

22

生产厂商 Elpida Memory
企业简称

ELPIDA美光科技

中文名称

美光科技股份有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-20 17:50:00

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EBE21FD4AGFD-6E-E规格书详情

Advanced Memory Buffer Overview

The Advanced Memory Buffer (AMB) reference design complies with the FB-DIMM Architecture and Protocol Specification. It supports DDR2 SDRAM main memory. The AMB allows buffering of memory traffic to support large memory capacities. All memory control for the DRAM resides in the host, including memory request initiation, timing, refresh, scrubbing, sparing, configuration access, and power management. The AMB interface is responsible for handling FB-DIMM channel and memory requests to and from the local DIMM and for forwarding requests to other DIMMs on the FB-DIMM channel.

Features

• JEDEC standard Raw Card E Design

• Industry Standard Advanced Memory Buffer (AMB)

• High-speed differential point-to-point link interface at 1.5V (JEDEC draft spec)

- 14 north-bound (NB) high speed serial lanes

- 10 south-bound (SB) high speed serial lanes

• Various features/modes:

- MemBIST and IBIST test functions

- Transparent mode and direct access mode for DRAM testing

- Interface for a thermal sensor and status indicator

• Channel error detection and reporting

• Automatic DDR2 SDRAM bus and channel calibration

• SPD (serial presence detect) with 1piece of 256 byte serial EEPROM

产品属性

  • 型号:

    EBE21FD4AGFD-6E-E

  • 制造商:

    ELPIDA

  • 制造商全称:

    Elpida Memory

  • 功能描述:

    2GB Fully Buffered DIMM

供应商 型号 品牌 批号 封装 库存 备注 价格
ELPIDA
23+
NA
39960
只做进口原装,终端工厂免费送样
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