EBE21EE8ABFA-8E-E中文资料美光科技数据手册PDF规格书

2GB Unbuffered DDR2 SDRAM DIMM

EBE21EE8ABFA (256M words ×72 bits, 2 Ranks)

Features

• Double-data-rate architecture; two data transfers per clock cycle

• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture

• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver

• DQS is edge-aligned with data for READs; center aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK transitions

• Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS

• Data mask (DM) for write data

• Posted /CAS by programmable additive latency for better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die Termination for better signal quality

• /DQS can be disabled for single-ended Data Strobe operation