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INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州仪器美国德州仪器公司

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州仪器美国德州仪器公司

INA131AP.A

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州仪器美国德州仪器公司

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州仪器美国德州仪器公司

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州仪器美国德州仪器公司

INA131BP.A

PrecisionG=100INSTRUMENTATIONAMPLIFIER

FEATURES LOWOFFSETVOLTAGE:50mVmax LOWDRIFT:0.25mV/°Cmax LOWINPUTBIASCURRENT:2nAmax HIGHCOMMON-MODEREJECTION: 110dBmin INPUTOVERVOLTAGEPROTECTION: ±40V WIDESUPPLYRANGE:±2.25to±18V LOWQUIESCENTCURRENT:3mA 8-PINPLASTICDIP APPLICATIONS BRIDGEAMPLIFIER THERMOC

TI2Texas Instruments

德州仪器美国德州仪器公司

IRF131

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半导体

IRF131

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

供应商型号品牌批号封装库存备注价格
2000
2700
询价
Everlight Electronics Co Ltd
30000
询价
24+
N/A
65000
一级代理-主营优势-实惠价格-不悔选择
询价
EVERLIGHT/亿光
23+
DIPSMD
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多EAI-I131C供应商 更新时间2025-7-24 8:01:00