丝印：INA131BP；Package：PDIP；Precision G = 100 INSTRUMENTATION AMPLIFIER

FEATURES LOW OFFSET VOLTAGE: 50mV max LOW DRIFT: 0.25mV/°C max LOW INPUT BIAS CURRENT: 2nA max HIGH COMMON-MODE REJECTION: 110dB min INPUT OVERVOLTAGE PROTECTION: ±40V WIDE SUPPLY RANGE: ±2.25 to ±18V LOW QUIESCENT CURRENT: 3mA 8-PIN PLASTIC DIP APPLICATIONS BRIDGE AMPLIFIER THERMOC

文件：222.04 Kbytes 页数：13 Pages

TI

德州仪器

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：211.72 Kbytes 页数：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 20 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：180.59 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel MOSFET Transistor

文件：198.96 Kbytes 页数：2 Pages

ISC

无锡固电