F-131P

PCMountSinglePrimary

FC131

PNPEpitaxialPlanarSiliconCompositeTransistorSwitchingApplications(withBiasResistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC131isformedwithtwochips,beingequivalenttothe2SA1

FP131

OverCurrentProtectionIC

FP131DR-LF

OverCurrentProtectionIC

FSS131

LoadSwitchingApplications

LoadSwitchingApplications Features •LowON-resistance. •Ultrahigh-speedswitching. •2.5Vdrive.

FTC131

1A500V/600VBIDIRECTIONALTRIACS

GRF131

SURFACEMOUNTHIGHREPEATABILITYSPDT,BROADBAND18GHZ,40GBPSNON-LATCHINGRFRELAY

DESCRIPTION TheultraminiatureSeriesGRF131isdesignedtoprovide apracticalsurface-mountswitching solutionwithRFperformanceandrepeatabilityto 18GHz.TheGRF131improvesonTeledyneRelays’ heritageofminiatureRFrelaysbyincorporatingaprecision transmissionlinestructurein

HCX-D131

For76.8V24SLiFePO4BatteryPacks

HVC131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features •Lowcapacitance.(C=0.8pFmax) •Lowforwardresistance.(rf=1.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HVC131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features •Lowcapacitance.(C=0.8pFmax) •Lowforwardresistance.(rf=1.0Ωmax) •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.