丝印：E89；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

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ROHM

罗姆

丝印：E89L25Y；Package：SOT669；N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

1. General description N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications. 2. Features and benefits • Fully optimized Safe Operating Area (SOA) for

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Pérmanent Magnets

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