BZX8450-C6V2-Q

Marking：E8；Package：SOT23；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤250mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specif

BZX84C3V0

Marking：E8；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

BZX84W-B6V8

Marking：E8；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

ESDA8V2-1J

Marking：E8；Package：SOD-323；High EOS and ESD protection level

Features BreakdownvoltageVBR=8.2V Unidirectionaldevice Highpeakpowerdissipation:500W (8/20μswaveform) ESDprotectionlevelbetterthan IEC61000-4-2,level4: 30kVcontactdischarge Lowleakagecurrent(

LDTD113ZLT1G

Marking：E8；Package：SOT-23；Digital transistors (built-in resistors)

•Features 1)Built-inbiasresistorsenabletheconfigurationofaninverter circuitwithoutconnectingexternalinputresistors(seethe equivalentcircuit). 2)Thebiasresistorsconsistofthin-filmresistorswithcomplete isolationtoallownegativebiasingoftheinput.Theyal

MM5Z12VT5G

Marking：E8；Package：SC-79；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD523(SC-79)ultrasmallflatleadSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Non-repetitivepeakreversepowerdisspation:≤40W •Totalpowerdissipation:≤300mW •Toleranceseries:±2 •Wide

MM5Z3V9

Marking：E8；Package：SOD-530；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

PDTA115TM

Marking：E8；Package：SC-101；PNP resistor-equipped transistors; R1 = 100 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

PDTC143ZQB

Marking：E8；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC143ZQB-Q

Marking：E8；Package：DFN1110D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •QualifiedaccordingtoAEC-Q