NC7SU04L6X

Marking：E5；Package：SIP6；TinyLogic HS Unbuffered Inverter

Description TheNC7SU04isasinglespecialpurposeCMOSInverter.The invertercircuitisdesignedwithasingleunbufferedstagetofacilitate useincrystaloscillatorapplications.Itisnotintendedforuseinlogic inversionapplications. AdvancedSiliconGateCMOSfabricationassuresh

PDTA114EM

Marking：E5；Package：DFN1006-3；50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1.Generaldescription PNPResistor-EquippedTransistor(RET)inaleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. NPNcomplement:PDTC114EM 2.Featuresandbenefits .100mAoutputcurrentcapability .Built-inbiasresistors .Simplifiescircuitdesig

PDTC124XQB

Marking：E5；Package：SOT8015；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint

PDTC124XQB-Q

Marking：E5；Package：SOT8015；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits •100mAoutputcurrentcapability •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •Lowpackageheightof0.5mm •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •QualifiedaccordingtoAEC-Q

PESD24VS2UQ

Marking：E5；Package：SOT663；Double ESD protection diodes in SOT663 package

1.1Generaldescription UnidirectionaldoubleElectroStaticDischarge(ESD)protectiondiodesinaSOT663ultra smallandflatleadSurface-MountedDevice(SMD)plasticpackagedesignedtoprotect uptotwosignallinesfromthedamagecausedbyESDandothertransients. 1.2Features 1.3Appl

PESD24VS5UD

Marking：E5；Package：SC-74；Fivefold ESD protection diode arrays

1.1Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearraysinaSOT457(SC-74)small Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectuptofivesignallines fromthedamagecausedbyESDandothertransients. 1.2Features 1.3Applications nESDpr

PESD24VS5UD-Q

Marking：E5；Package：SOT457；Fivefold ESD protection diode array

1.Generaldescription FivefoldElectroStaticDischarge(ESD)protectiondiodearrayinaSOT457(SC-74)smallSurface- MountedDevice(SMD)plasticpackage,designedtoprotectuptofivesignallinesfromthe damagecausedbyESDandothertransients. 2.Featuresandbenefits •ESDprotecti

PMEG100T30ELP

Marking：E5；Package：CFP5；100 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •LowQrrandlowIRM •Lowleakagecurren

PMEG100T30ELP-Q

Marking：E5；Package：CFP5；100 V, 3 A low leakage current Trench MEGA Schottky barrier rectifier

1.Generaldescription TrenchMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierencapsulatedin aCFP5(SOD128)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowforwardvoltage •LowQrrandlowIRM •Lowleakagecurren

PMEG2005AEA

Marking：E5；Package：SOD323；20 V, 0.5 A very low VF Schottky barrier rectifier

1.Generaldescription Schottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedina SOD323(SC-76)verysmallSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Verylowforwardvoltage •Highsurgecurrent •VerysmallplasticSMD