丝印：E50；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

DESCRIPTION The SP6200 and SP6201 are CMOS LDOs designed to meet a broad range of applications that require accuracy, speed and ease of use. These LDOs offer extremely low quiescent current which only increases slightly under load, thus providing advantages in ground current performance over bipo

文件：144.42 Kbytes 页数：10 Pages

Sipex

丝印：E50；Package：SOT-25；Micropower, 100mA and 200mA CMOS LDO Regulators

文件：426.37 Kbytes 页数：17 Pages

Sipex

丝印：E50MD7；Package：PG-TO247-2-STD-NA8.8；Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features • VRRM = 1200 V • IF = 50 A • 1200 V emitter controlled technology • Maximum junction temperature Tvjmax = 175°C • Low forward voltage (VF) • Low reverse recovery charge • Ultrafast recovery times • Soft recovery characteristics • Pb-free lead plating; RoHS compliant • Humidity

文件：1.21063 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：E50EE7；Package：PG-TO247-2-STD-NA8.8；The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features • VRRM = 650 V • IF = 50 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for targe

文件：1.33689 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：E50N06；Package：TO-263；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.77 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：E50N06；Package：TO-263；50A 60V N-channel Enhancement Mode Power MOSFET

文件：812.59 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：E50N06；Package：TO-263；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.72 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：E50N06；Package：TO-263；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.18 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：E50N06；Package：TO-263；50A 60V N-channel Enhancement Mode Power MOSFET

文件：808.45 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：E50N06；Package：TO-263；50A 60V N-channel Enhancement Mode Power MOSFET

文件：807.99 Kbytes 页数：10 Pages

WXDH

东海半导体