E28F010-120中文资料28F010 1024K (128K X 8) CMOS FLASH MEMORY数据手册Intel规格书

描述 Description

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings. Flash Electrical Chip-Erase
 1 Second Typical Chip-Erase
 Quick-Pulse Programming Algorithm
 10 µs Typical Byte-Program
 2 Second Chip-Program
 100,000 Erase/Program Cycles
 12.0 V ±5% VPP
 High-Performance Read
 90 ns Maximum Access Time
 CMOS Low Power Consumption
 10 mA Typical Active Current
 50 µA Typical Standby Current
 0 Watts Data Retention Power
 Integrated Program/Erase Stop Timer
 Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
 Noise Immunity

特性 Features

 ±10% VCC Tolerance
 Maximum Latch-Up Immunity through EPI Processing
 ETOX™ Nonvolatile Flash Technology
 EPROM-Compatible Process Base
 High-Volume Manufacturing Experience
 JEDEC-Standard Pinouts
 32-Pin Plastic Dip
 32-Lead PLCC
 32-Lead TSOP
   (See Packaging Spec., Order #231369)
 Extended Temperature Options