1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

Intel

英特尔

28F010 1024K (128K X 8) CMOS FLASH MEMORY

文件：895.48 Kbytes 页数：33 Pages

Intel

英特尔

28F010 1024K (128K X 8) CMOS FLASH MEMORY

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer s  ±10% VCC Tolerance\n Maximum Latch-Up Immunity through EPI Processing\n ETOX™ Nonvolatile Flash Technology\n EPROM-Compatible Process Base\n High-Volume Manufacturing Experience\n JEDEC-Standard Pinouts\n 32-Pin Plastic Dip\n 32-Lead PLCC\n 32-Lead TSOP\n   (See Packaging Spec., Order #2;

Intel

英特尔

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

文件：405.78 Kbytes 页数：30 Pages

Intel

英特尔

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

文件：695.87 Kbytes 页数：18 Pages

ISSI

矽成半导体

131,072 x 8 CMOS FLASH MEMORY

131,072 x 8 CMOS FLASH MEMORY

文件：695.87 Kbytes 页数：18 Pages

ISSI

矽成半导体