E28F010-120中文资料英特尔数据手册PDF规格书

28F010 1024K (128K X 8) CMOS FLASH MEMORY

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

■ Flash Electrical Chip-Erase

 - 1 Second Typical Chip-Erase

■ Quick-Pulse Programming Algorithm

 - 10 µs Typical Byte-Program

 - 2 Second Chip-Program

■ 100,000 Erase/Program Cycles

■ 12.0 V ±5 VPP

■ High-Performance Read

 - 90 ns Maximum Access Time

■ CMOS Low Power Consumption

 - 10 mA Typical Active Current

 - 50 µA Typical Standby Current

 - 0 Watts Data Retention Power

■ Integrated Program/Erase Stop Timer

■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

■ Noise Immunity Features

 - ±10 VCC Tolerance

 - Maximum Latch-Up Immunity through EPI Processing

■ ETOX™ Nonvolatile Flash Technology

- EPROM-Compatible Process Base

 - High-Volume Manufacturing Experience

■ JEDEC-Standard Pinouts

- 32-Pin Plastic Dip

- 32-Lead PLCC

 - 32-Lead TSOP

(See Packaging Spec., Order #231369)

■ Extended Temperature Options