16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memo

文件：1.26515 Mbytes 页数：54 Pages

Intel

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16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memo

文件：1.26515 Mbytes 页数：54 Pages

Intel

英特尔

16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memo

文件：1.26515 Mbytes 页数：54 Pages

Intel

英特尔

16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining very high read performance with the intrinsic nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memo

文件：1.26515 Mbytes 页数：54 Pages

Intel

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28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

Intel

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28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

Intel

英特尔

28F020 2048K (256K X 8) CMOS FLASH MEMORY

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer

文件：878.8 Kbytes 页数：38 Pages

Intel

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3 Volt Intel StrataFlash Memory

Product Overview The 0.25 µ 3 Volt Intel StrataFlash memory family contains high-density memories organized as 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organize

文件：380.43 Kbytes 页数：58 Pages

Intel

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WORD-WIDE FlashFile MEMORY FAMILY

Intel’s Word-Wide FlashFile™ memory family provides high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. The word-wide memories are available at various densities in the same package type. Their symmetrically-blocked architecture, voltage, and extende

文件：1.22007 Mbytes 页数：50 Pages

Intel

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WORD-WIDE FlashFile MEMORY FAMILY

Intel’s Word-Wide FlashFile™ memory family provides high-density, low-cost, nonvolatile, read/write storage solutions for a wide range of applications. The word-wide memories are available at various densities in the same package type. Their symmetrically-blocked architecture, voltage, and extende

文件：1.22007 Mbytes 页数：50 Pages

Intel

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