GR-253-Core SMC (SONET minimum clock) and ITU G.813 Option 2 Minature Surface Mount TCXO

文件：28.53 Kbytes 页数：2 Pages

SEMTECH

先之科

GR-253-Core SMC (SONET minimum clock) and ITU G.813 Option 2 Minature Surface Mount TCXO

Semtech

先之科

GR-253-Core SMC (SONET minimum clock) and ITU G.813 Option 2 Minature Surface Mount TCXO

文件：28.53 Kbytes 页数：2 Pages

SEMTECH

先之科

SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Small switching

文件：366.73 Kbytes 页数：5 Pages

SANYO

三洋

P-Channel Power MOSFET

P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal

文件：660.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

P-Channel Power MOSFET

P-Channel Power MOSFET –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • 1.8V drive • [SBD] • Smal

文件：660.08 Kbytes 页数：8 Pages

ONSEMI

安森美半导体