DZT5551Q中文资料160V NPN TRANSISTOR VOLTAGE TRANSISTOR IN SOT223数据手册Diodes规格书

描述 Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

特性 Features

BVCEO > 160V
BVEBO > 6V
IC = 600mA Continuous Collector Current
Low Saturation Voltage (150mV max @10mA)
hFE Specified Up to 50mA for a High Gain Hold Up
Complementary PNP Type: DZT5401
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable

应用 Application

High Voltage Amplification Applications
High Voltage Switching

简介

DZT5551Q属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的DZT5551Q晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。