DXTP07060BFG中文资料PNP, 60V, 3A, PowerDI3333-8数据手册Diodes规格书

描述 Description

60V PNP HIGH PERFORMANCE TRANSISTOR IN PowerDI3333-8

特性 Features

•BVCEO > -60V
•Small Form Factor Thermally Efficient Package.
•Enables Higher Density End Products
•IC = -3A High Continuous Current
•ICM = -6A Peak Pulse Current
•Low Saturation Voltage VCE(SAT) < -250mV @ -1A
•Complementary NPN Type: DXTN07060BFG
•Rated to +175°C – Ideal For High Temperature Environment
•Wettable Flank For Improved Optical Inspection
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
•Qualified to AEC-Q101 Standards for High Reliability

应用 Application

•High Side Switch
•MOSFET or IGBT Gate Driver

简介

DXTP07060BFG属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由Diodes制造生产的DXTP07060BFG晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。