MOSFET

Power Metal Strip® Battery Shunt Resistor With M4 Tapped Holes and Sn Plated Terminals,Very Low Value(50 μΩ,100μΩ,125μΩ and 250μΩ) ·AEC-Q200 qualified\n·Compliant with requirement #26 of NF-EN45545-2\n·Hifh power 600 W at 85℃ bottom case temperature;

Dowellsemi

敦为

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：692.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GT090N06MH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07666 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

60V N-Ch Power MOSFET

Feature ◇High Speed Power Switching, Logic Level ◇Enhanced Body diode dv/dtcapability ◇EnhancedAvalanche Ruggedness ◇100% UIS Tested, 100% Rg Tested ◇Lead Free, HalogenFree Application ◇Synchronous Rectification in SMPS ◇Hard Switching and High Speed Circuit ◇DC/DCin Telecoms and

文件：805.9 Kbytes 页数：6 Pages

HUNTECK

恒泰柯半导体