TCMT4106

HalfPitchMini-FlatPackage

Description TheTCMT11..Seriesconsistofaphototransistoropticallycoupledtoagalliumarsenideinfraredemittingdiodeinan4-leadupto16-leadplasticMiniflatpackage. Theelementsaremountedononeleadframeusingacoplanartechnique,providingafixeddistancebetweeninputandou

TSG4106A

RFVectorSignalGenerators

TTC-4106

CommonModeChokes&CoupledInductors

ZVN4106F

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET PARMARKINGDETAIL-MZ

ZVN4106F

SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features •BVDSS>60V •RDS(on)≤2.5Ω@VGS=10V •MaximumcontinuousdraincurrentID=200mA •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability

ZVN4106FTA

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective2002/95/EC BENEFITS •Low

ZVN4106FTA

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFETINSOT23

Features •BVDSS>60V •RDS(on)≤2.5Ω@VGS=10V •MaximumcontinuousdraincurrentID=200mA •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q101StandardsforHighReliability