RAYCHEM Tubing Products

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MACOM

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • VERY HIGH fmax: 100GHz • +18.5dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PR

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EXCELICS

High Efficiency Heterojunction Power FET

· VERY HIGH fmax: 120GHz · +20.0dBm TYPICAL OUTPUT POWER · 13.0dB TYPICAL POWER GAIN AT 18 GHz · TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz · 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE · Si3N4 PASSIVATION AND VIA HOLE GROUNDING · ADVANCED EPITAXIAL HETEROJUNCT

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EXCELICS

High Efficiency Heterojunction Power FET

FEATURES • VERY HIGH fmax: 120GHz • +20.0dBm TYPICAL OUTPUT POWER • 13.0dB TYPICAL POWER GAIN AT 18 GHz • TYPICAL 0.75dB NOISE FIGURE AND 12.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTR

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EXCELICS