RF Power MOSFET Transistor 60W, 2-175MHz, 12V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications

文件：156.65 Kbytes 页数：3 Pages

MA-COM

RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices • Specifically Designed for 12 Volt Applications

文件：197.9 Kbytes 页数：3 Pages

MACOM

2-175 MHz, 60W, 12V, RF MOSFET power transistor

MACOM

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

文件：38.93 Kbytes 页数：2 Pages

POLYFET

DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated

文件：67.74 Kbytes 页数：9 Pages

UNISEM

DUAL 6A AND 1A LOW DROPOUT POSITIVE ADJUSTABLE REGULATOR

DESCRIPTION The US1260 product using a proprietary process combines a dual low drop out adjustable output regulators in a single package with one output having a minimum of 6A and the other one having a 1A output current capability. This product is specifically designed to provide well regulated

文件：67.74 Kbytes 页数：9 Pages

UNISEM