NP40N10PDF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=27mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP40N10VDF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=26mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NP40N10VDF

ProductScoutAutomotive

NP40N10VDF

N-ChannelMOSFETusesadvancedSGTtechnology

NP40N10VDF

100V??40A??N-channelPowerMOSFETApplication:Automotive

NP40N10YDF

ProductScoutAutomotive

NP40N10YDF

MOSFIELDEFFECTTRANSISTOR

Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=25mΩMAX.(VGS=10V,ID=20A)(NP40N10YDF) ⎯RDS(on)=26mΩMAX.(VGS=10V,ID=20A)(NP40N10VDF) ⎯RDS(on

RFG40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

RFG40N10

40A,100V,0.040Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

RFG40N10LE

40A,100V,0.040Ohm,LogicLevelN-ChannelPowerMOSFETs