丝印：DTA；Package：SOT-143；Transient Voltage Suppressors for ESD Protection

Feature 300~529 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line Low clamping voltage Working voltages:5.0V ~ 36V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 5.0V ~ 15V IEC61000-4-2 (ESD) ±15kV (air), ±10kV (contact): 18V ~ 36V IEC6

文件：2.39654 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：DTA；Package：SOT-143；Transient Voltage Suppressors for ESD Protection

Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 300~529 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line Low Clamping Voltage Working Voltages: 5.0V~36V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2 (ESD) ±30kV (air), ±30kV

文件：2.38723 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：DTA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response ti

文件：2.90188 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：DTA；Package：DO-214AA；Transient Voltage Suppressors

600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Features Glass passivated chip High reliability application and automotive

文件：1.58939 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：DTA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：DTA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：DTAA；Package：10Ld3x3DFN；Dual LDO with Low Noise, Low IQ and High PSRR

Dual LDO with Low Noise, Low IQ and High PSRR ISL9011 is a high performance dual LDO capable of sourcing 150mA current from Channel 1 and 300mA from Channel 2. The device has a low standby current and high-PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. A refer

文件：548.8 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：30；Package：EMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Com

文件：355.89 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：30；Package：VMT3；100mA/-50V Digital transistors(with built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Com

文件：355.89 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：30；Package：UMT3F；100mA/-50V Digital transistors(with built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Com

文件：355.89 Kbytes 页数：3 Pages

ROHM

罗姆