DSS3515MQ中文资料15V PNP LOW VCESAT TRANSISTOR数据手册Diodes规格书

描述 Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.

特性 Features

•BVCEO > -15V
•IC = -500mA High Collector Current
•ICM = -1A Peak Pulse Current
•PD = 1000mW Power Dissipation
•Low Collector-Emitter Saturation Voltage, VCE(SAT)
•0.60mm2 Package Footprint, 13 Times Smaller than SOT23
•0.5mm Height Package Minimizing Off-Board Profile
•Complementary NPN Type DSS2515M
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
•Qualified to AEC-Q101 Standards for High Reliability
•PPAP Capable (Note 4)

简介

DSS3515MQ属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由Diodes制造生产的DSS3515MQ晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。