FDB8870

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=160A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDB8870

N-ChannelPowerTrench짰MOSFET

FDB8870

N-ChannelPowerTrenchMOSFET30V,160A,3.9mW

FDD8870

N-ChannelPowerTrenchMOSFET

FDD8870

N-ChannelPowerTrench짰MOSFET

FDD8870

N-channelAdvancedModePowerMOSFET

Features VDS=40V,ID=150A RDS(ON)

FDD8870

30VN-ChannelMOSFET

Features Highperformancetrenchtechnologyforextremelylow RDS(ON) Lowgatecharge Highpowerandcurrenthandlingcapability VDS=30V RDS(ON)(atVGS=10V)

FDD8870

iscN-ChannelMOSFETTransistor

FDP8870

iscN-ChannelMOSFETTransistor

FDP8870

N-ChannelPowerTrenchMOSFET30V,156A,4.1m?