| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
DarlingtonLampDriver Description Thisintegratedcircuitisaflipchiplampdriverforuseinanautomotivealternatorsystem.Thecircuitdrivesanindicatorlamplocatedonthedashboard.Reversebatteryprotectionisprovidedwithinternaldiode,D1,andexternalresistorsonB,C1andC2. Features ■DCCurrent | CherryCHERRY 珠海确励珠海确励电子有限公司 | Cherry | ||
P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitUniversalShiftRegister;Three-State | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
详细参数
- 型号：
DS299-R
- 制造商：
Miyama Electric
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NATIONALSEMI |
2021+ |
N/A |
6800 |
只有原装正品 |
询价 | ||
nsc |
2019 |
SMD |
324554 |
原装进口现货 |
询价 | ||
InnoDisk |
22+ |
4000 |
原装现货 支持实单 |
询价 | |||
KUAN |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INNODISK |
17+ |
SMD |
6200 |
100%原装正品现货 |
询价 | ||
DS |
22+ |
SSOP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
TI |
2017+ |
SOT23-3 |
23569 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TI |
2023+ |
SOT23-3 |
8700 |
原装现货 |
询价 | ||
C&K |
20+ |
开关元件 |
396 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
C&K |
2021+ |
- |
499 |
询价 |
相关规格书
更多- DS299-W
- DS-2AF1-401
- DS2C
- DS2CB
- DS2CBG
- DS2CBY
- DS-2CC102N-IR
- DS-2CC112N-IR3
- DS-2CC1173N-VFIR
- DS-2CC1197N-VFIR
- DS-2CC192N-IR
- DS2CGG
- DS2CGY
- DS2CRB
- DS2CRR
- DS2CY
- DS2CYG
- DS2CYY
- DS2D6AQ1
- DS2D6AQ3
- DS2D6BQ2
- DS2D6CQ1
- DS2D6CQ3
- DS2EM12C
- DS2EM15C
- DS2EM3C
- DS2EM5C
- DS2EM9C
- DS2E-M-DC1.5V-C
- DS2EMDC12V
- DS2E-M-DC12V
- DS2E-M-DC12V-C
- DS2E-M-DC12V-R
- DS2EMDC24V
- DS2E-M-DC24V
- DS2E-M-DC3V-R
- DS2EMDC48V1C
- DS2E-M-DC48V-C
- DS2E-M-DC48V-TB
- DS2-EMDC5V
- DS2E-M-DC5V-1
- DS2E-M-DC5V-1C-H179
- DS2E-M-DC5V-C
- DS2E-M-DC5V-R-TB
- DS2E-M-DC6V
相关库存
更多- DS299-Y
- DS-2AF1-401X
- DS2-C-12V
- DS2CBB
- DS2CBR
- DS2CC
- DS-2CC102N-IR3
- DS-2CC1173N-VF
- DS-2CC1197N-A
- DS-2CC192N-A
- DS2CGB
- DS2CGR
- DS2CR
- DS2CRG
- DS2CRY
- DS2CYB
- DS2CYR
- DS-2CZ252N
- DS2D6AQ2
- DS2D6BQ1
- DS2D6BQ3
- DS2D6CQ2
- DS2EL224D
- DS2EM12RC
- DS2EM24C
- DS2EM48C
- DS2EM6C
- DS2E-M-DC1.5V
- DS2E-M-DC1.5V-R
- DS2-EMDC12V
- DS2EMDC12VC
- DS2E-M-DC12V-H12
- DS2E-M-DC12V-TB
- DS2-EMDC24V
- DS2E-M-DC3V
- DS2E-M-DC48V
- DS2EMDC48VC
- DS2E-M-DC48V-R
- DS2EMDC5V
- DS2E-M-DC5V
- DS2E-M-DC5V-1C
- DS2E-M-DC5V-1C-N73
- DS2E-M-DC5V-R
- DS2E-M-DC5V-TB
- DS2E-M-DC9V
