Loose-Cell NiMH Chargers Detect and Avoid Charging Alkaline Cells

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Maxim

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N-Channel UltraFET Trench MOSFET 250V, 64A, 34m廓

文件：353.46 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 64A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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OPTICALLY ISOLATED ERROR AMPLIFIER

Introduction The arm wrestling between voice and data has concluded in favor of the latter with all the major players now posturing for leadership of the migration from traditional voice to Internet Protocol (IP) telephony. On the short term the huge investments in both traditional telephony in

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司