Package：16-DIP（0.300"，7.62mm）；包装：卷带（TR） 类别：集成电路（IC） 驱动器，接收器，收发器 描述：IC DRIVER 6/0 16DIP

TI

德州仪器

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes 页数：6 Pages

NSC

国半

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：37.6 Kbytes 页数：2 Pages

POLYFET

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

文件：102.85 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉