DS1265W-100-IND技术资料参数原装现货美信-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
DS1265W-100-IND	文件：155.91 Kbytes Page：8 Pages	3.3V 8Mb Nonvolatile SRAM DESCRIPTION The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：155.91 Kbytes 页数：8 Pages	Dallas	Dallas
DS1265W-100	文件：192.54 Kbytes Page：8 Pages	3.3V 8Mb Nonvolatile SRAM 文件：192.54 Kbytes 页数：8 Pages	Dallas	Dallas
DS1265W-100	文件：155.91 Kbytes Page：8 Pages	3.3V 8Mb Nonvolatile SRAM DESCRIPTION The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition 文件：155.91 Kbytes 页数：8 Pages	Dallas	Dallas
DS1265W-100+	文件：192.54 Kbytes Page：8 Pages	3.3V 8Mb Nonvolatile SRAM 文件：192.54 Kbytes 页数：8 Pages	Maxim 美信	Maxim

更多DS1265W-100-IND供应商更新时间2025-10-5 10:30:00