DS1265W-100-IND中文资料亚德诺数据手册PDF规格书

DESCRIPTION

The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

◾ 10 years minimum data retention in the absence of external power

◾ Data is automatically protected during power loss

◾ Unlimited write cycles

◾ Low-power CMOS operation

◾ Read and write access times as fast as 100ns

◾ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

◾ Optional industrial (IND) temperature range of -40°C to +85°C