256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

文件：213.86 Kbytes 页数：12 Pages

Dallas

256k Nonvolatile SRAM

DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio

文件：213.86 Kbytes 页数：12 Pages

Dallas

RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices • Specifically Designed for 12 Volt Applications

文件：195.34 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor 30W, 2-175MHz, 12V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications

文件：160.37 Kbytes 页数：3 Pages

MA-COM