RF Power MOSFET Transistor 30W, 2-175MHz, 12V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • Specifically designed for 12 volt applications

文件：160.37 Kbytes 页数：3 Pages

MA-COM

RF MOSFET Power Transistor, 30W, 12V, 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices • Specifically Designed for 12 Volt Applications

文件：195.34 Kbytes 页数：3 Pages

MACOM

2-175 MHz, 30W, 12V, RF MOSFET power transistor

MACOM

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