DS1230Y-120-IND资料datasheet下载供应价格-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
DS1230Y-120-IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-120	文件：222.21 Kbytes Page：10 Pages	256k Nonvolatile SRAM 文件：222.21 Kbytes 页数：10 Pages	Maxim 美信	Maxim
DS1230Y-120	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas
DS1230Y-120IND	文件：213.86 Kbytes Page：12 Pages	256k Nonvolatile SRAM DESCRIPTION The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a conditio 文件：213.86 Kbytes 页数：12 Pages	Dallas	Dallas

更多DS1230Y-120-IND供应商更新时间2025-10-10 14:51:00