SDS065J004C4

Marking：DS065004C4；Package：TO-220-2L；4 th Generation 650V/ 4 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J004D3

Marking：DS065004D3；Package：TO-252-2L；3 rd Generation 650 V/ 4 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J004D4

Marking：DS065004D4；Package：TO-252-2L；4 th Generation 650 V/ 4 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J006C3

Marking：DS065006C3；Package：TO-220-2L；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J006D3

Marking：DS065006D3；Package：TO-252-2L；3 rd Generation 650 V/ 6 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J006E3

Marking：DS065006E3；Package：TO-263-2L；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J006S3

Marking：DS065006S3；Package：DFN884L；3 rd Generation 65 0V/ 6 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide( Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J008C3

Marking：DS065008C3；Package：TO-220-2L；3 rd Generation 650 V/ 8A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant

SDS065J008D3

Marking：DS065008D3；Package：TO-252-2L；650V/8A SiC Schottky Barrier Diode

ZeroReverseRecoveryCurrent Positivetemperaturecoefficient Temperatureindependentperformance Highspeedswitching Lowswitchingloss Lowheatdissipationrequirements Application ➢Switchingpowersupply ➢Powerfactorcorrection ➢Motordrivetraction ➢Chargingpile

SDS065J008D4

Marking：DS065008D4；Package：TO-252-2L；4 th Generation 650 V/ 8 A SiC Schottky Barrier Diode

RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant