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DRV8701PRGET.B中文资料德州仪器数据手册PDF规格书

PDF无图
厂商型号

DRV8701PRGET.B

功能描述

DRV8701 Brushed DC Motor Full-Bridge Gate Driver

丝印标识

8701P

封装外壳

VQFN(RGE)

文件大小

2.22887 Mbytes

页面数量

40

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-31 23:00:00

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DRV8701PRGET.B价格和库存,欢迎联系客服免费人工找货

DRV8701PRGET.B规格书详情

1 Features

1• Single H-Bridge Gate Driver

– Drives Four External N-Channel MOSFETs

– Supports 100% PWM Duty Cycle

• 5.9-V to 45-V Operating Supply Voltage Range

• Two Control Interface Options

– PH/EN (DRV8701E)

– PWM (DRV8701P)

• Adjustable Gate Drive (5 Levels)

– 6-mA to 150-mA Source Current

– 12.5-mA to 300-mA Sink Current

• Supports 1.8-V, 3.3-V, and 5-V Logic Inputs

• Current Shunt Amplifier (20 V/V)

• Integrated PWM Current Regulation

– Limits Motor Inrush Current

• Low-Power Sleep Mode (9 μA)

• Two LDO Voltage Regulators to Power External

Components

– AVDD: 4.8 V, up to 30-mA Output Load

– DVDD: 3.3 V, up to 30-mA Output Load

• Small Package and Footprint

– 24-Pin VQFN (PowerPAD™)

– 4.0 × 4.0 × 0.9 mm

• Protection Features:

– VM Undervoltage Lockout (UVLO)

– Charge Pump Undervoltage (CPUV)

– Overcurrent Protection (OCP)

– Pre-Driver Fault (PDF)

– Thermal Shutdown (TSD)

– Fault Condition Output (nFAULT)

2 Applications

• Industrial Brushed-DC Motors

• Robotics

• Home Automation

• Industrial Pumps and Valves

• Power Tools

• Handheld Vacuum Cleaners

3 Description

The DRV8701 is a single H-bridge gate driver that uses four external N-channel MOSFETs targeted to

drive a 12-V to 24-V bidirectional brushed DC motor.

A PH/EN (DRV8701E) or PWM (DRV8701P)

interface allows simple interfacing to controller

circuits. An internal sense amplifier allows for

adjustable current control. The gate driver includes circuitry to regulate the winding current using fixed

off-time PWM current chopping.

DRV8701 drives both high- and low-side FETs with

9.5-V VGS gate drive. The gate drive current for all

external FETs is configurable with a single external

resistor on the IDRIVE pin.

A low-power sleep mode is provided which shuts

down internal circuitry to achieve very-low quiescent

current draw. This sleep mode can be set by taking

the nSLEEP pin low.

Internal protection functions are provided:

undervoltage lockout, charge pump faults,

overcurrent shutdown, short-circuit protection,

predriver faults, and overtemperature. Fault

conditions are indicated on the nFAULT pin.

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
24+
NA
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TI/德州仪器
24+
NA/
3650
原装现货,当天可交货,原型号开票
询价
TI
2023+
32VQFN
5921
安罗世纪电子只做原装正品货
询价
Texas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
TI/德州仪器
2023+
VQFN32
2896
一级代理优势现货,全新正品直营店
询价
22+
5000
询价
MICROCHIP/
23+
VQFN-32
6000
正规渠道,只有原装!
询价
TI
19+
QFN
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
TI
25+
VQFN (RHB)
6000
原厂原装,价格优势
询价
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价