DRV8701ERGET集成电路（IC）的电机驱动器控制器规格书PDF中文资料

DRV8701ERGET属于集成电路（IC）的电机驱动器控制器。由德州仪器制造生产的DRV8701ERGET电机驱动器，控制器产品属于电机驱动器和控制器电源管理集成电路 (PMIC) 系列，可用于控制或操作从某电源施加到电机或相关机电执行器的电源。所实现的具体功能和特性集根据预期负载和预期应用的特性有很大差异，范围从用于有刷电机的简单开环速度控制到基于步进电机的高级闭环运动控制。

1 Features

1• Single H-Bridge Gate Driver

– Drives Four External N-Channel MOSFETs

– Supports 100% PWM Duty Cycle

• 5.9-V to 45-V Operating Supply Voltage Range

• Two Control Interface Options

– PH/EN (DRV8701E)

– PWM (DRV8701P)

• Adjustable Gate Drive (5 Levels)

– 6-mA to 150-mA Source Current

– 12.5-mA to 300-mA Sink Current

• Supports 1.8-V, 3.3-V, and 5-V Logic Inputs

• Current Shunt Amplifier (20 V/V)

• Integrated PWM Current Regulation

– Limits Motor Inrush Current

• Low-Power Sleep Mode (9 μA)

• Two LDO Voltage Regulators to Power External

Components

– AVDD: 4.8 V, up to 30-mA Output Load

– DVDD: 3.3 V, up to 30-mA Output Load

• Small Package and Footprint

– 24-Pin VQFN (PowerPAD™)

– 4.0 × 4.0 × 0.9 mm

• Protection Features:

– VM Undervoltage Lockout (UVLO)

– Charge Pump Undervoltage (CPUV)

– Overcurrent Protection (OCP)

– Pre-Driver Fault (PDF)

– Thermal Shutdown (TSD)

– Fault Condition Output (nFAULT)

2 Applications

• Industrial Brushed-DC Motors

• Robotics

• Home Automation

• Industrial Pumps and Valves

• Power Tools

• Handheld Vacuum Cleaners

3 Description

The DRV8701 is a single H-bridge gate driver that uses four external N-channel MOSFETs targeted to

drive a 12-V to 24-V bidirectional brushed DC motor.

A PH/EN (DRV8701E) or PWM (DRV8701P)

interface allows simple interfacing to controller

circuits. An internal sense amplifier allows for

adjustable current control. The gate driver includes circuitry to regulate the winding current using fixed

off-time PWM current chopping.

DRV8701 drives both high- and low-side FETs with

9.5-V VGS gate drive. The gate drive current for all

external FETs is configurable with a single external

resistor on the IDRIVE pin.

A low-power sleep mode is provided which shuts

down internal circuitry to achieve very-low quiescent

current draw. This sleep mode can be set by taking

the nSLEEP pin low.

Internal protection functions are provided:

undervoltage lockout, charge pump faults,

overcurrent shutdown, short-circuit protection,

predriver faults, and overtemperature. Fault

conditions are indicated on the nFAULT pin.