DRV8353HRTAT.A中文资料德州仪器数据手册PDF规格书

1 Features

1• 9 to 100-V, Triple half-bridge gate driver

– Optional integrated buck regulator

– Optional triple low-side current shunt amplifiers

• Smart gate drive architecture

– Adjustable slew rate control for EMI

performance

– VGS handshake and minimum dead-time

insertion to prevent shoot-through

– 50-mA to 1-A peak source current

– 100-mA to 2-A peak sink current

– dV/dt mitigation through strong pulldown

• Integrated gate driver power supplies

– High-side doubler charge pump For 100%

PWM duty cycle control

– Low-side linear regulator

• Integrated LM5008A buck regulator

– 6 to 95-V operating voltage range

– 2.5 to 75-V, 350-mA output capability

• Integrated triple current shunt amplifiers

– Adjustable gain (5, 10, 20, 40 V/V)

– Bidirectional or unidirectional support

• 6x, 3x, 1x, and independent PWM modes

– Supports 120° sensored operation

• SPI or hardware interface available

• Low-power sleep mode (20 μA at VVM = 48-V)

• Integrated protection features

– VM undervoltage lockout (UVLO)

– Gate drive supply undervoltage (GDUV)

– MOSFET VDS overcurrent protection (OCP)

– MOSFET shoot-through prevention

– Gate driver fault (GDF)

– Thermal warning and shutdown (OTW/OTSD)

– Fault condition indicator (nFAULT)

2 Applications

• 3-phase brushless-DC (BLDC) motor modules

• Fans, blowers, and pumps

• E-Bikes, E-scooters, and E-mobility

• Power and garden tools, lawn mowers

• Drones, robotics, and RC toys

• Factory automation and textile machines

3 Description

The DRV835x family of devices are highly-integrated

gate drivers for three-phase brushless DC (BLDC)

motor applications. These applications include fieldoriented

control (FOC), sinusoidal current control, and

trapezoidal current control of BLDC motors. The

device variants provide optional integrated current

shunt amplifiers to support different motor control

schemes and a buck regulator to power the gate

driver or external controller.

The DRV835x uses smart gate drive (SGD)

architecture to decrease the number of external

components that are typically necessary for MOSFET

slew rate control and protection circuits. The SGD

architecture also optimizes dead time to prevent

shoot-through conditions, provides flexibility in

decreasing electromagnetic interference (EMI) by

MOSFET slew rate control, and protects against gate

short circuit conditions through VGS monitors. A

strong gate pulldown circuit helps prevent unwanted

dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and

independent) are supported for simple interfacing to

the external controller. These modes can decrease

the number of outputs required of the controller for

the motor driver PWM control signals. This family of

devices also includes 1x PWM mode for simple

sensored trapezoidal control of a BLDC motor by

using an internal block commutation table.