DRV8300-Q1中文资料德州仪器数据手册PDF规格书

1 Features

• AEC-Q100 qualified for automotive applications

– Temperature grade 1: –40°C ≤ TA ≤ 125°C

• 100-V Three Phase Half-Bridge Gate driver

– Drives N-Channel MOSFETs (NMOS)

– Gate Driver Supply (GVDD): 5-20 V

– MOSFET supply (SHx) support upto 100 V

• Integrated Bootstrap Diodes

• Bootstrap gate drive architecture

– 750-mA source current

– 1.5-A sink current

• Supports up to 48-V auto systems

• Low leakage current on SHx pins (<55 μA)

• Absolute maximum BSTx voltage upto 115-V

• Supports negative transients upto -22-V on SHx

• Built-in cross conduction prevention

• Fixed deadtime insertion of 215 ns

• Supports 3.3-V and 5-V logic inputs with 20 V Abs

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• 4 nS typical propogation delay matching

• Compact TSSOP package

• Efficient system design with Power Blocks

• Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)