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2PB1219AR

Marking:DR;Package:SOT323;PNP general purpose transistor

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.50V) •Lowcollector-emittersaturationvoltage(max.600mV).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2PB710AR

Marking:DR;Package:SC-59;PNP general purpose transistor

FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.50V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

2SD2212

Marking:DR;Package:SOT-89;Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1)Built-inzenerdiodebetweencollectorandbase. 2)StrongprotectionagainstreversesurgesduetoLloads. 3)Built-inresistorbetweenbaseandemitter. 4)Built-indamperdiode.

ROHMRohm

罗姆罗姆半导体集团

4.0SMF75A

Marking:DR;Package:SOD-123;3.3 To 48V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01% TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260℃/10satterminals. MeetAEC-Q101require

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

6.0SMAJ75CA

Marking:DR;Package:DO-214AC;5.0 To 200V 600W Surface Mount Transient Voltage Suppressors (TVS)

Glasspassivatedchip 600Wpeakpulsepowercapabilitywitha10/1000uswaveform Repetitiverate(dutycycle):0.01 TypicalIRlessthan1μAabove10V Excellentclampingcapability Veryfastresponsetime Hightemperaturesoldering:260°C/10satterminals. RoHScompliant Features

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

BCW60BR

Marking:DR;Package:SOT-23;SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

SOT23NPNSILICONPLANARSMALLSIGNALTRANSISTORS

Zetex

Zetex Semiconductors

BD4835

Marking:DR;Package:SSOP5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

罗姆罗姆半导体集团

BD4835FVE-TL

Marking:DR;Package:VSOF5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

罗姆罗姆半导体集团

BD4835FVE-TL

Marking:DR;Package:VSOF5;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

罗姆罗姆半导体集团

BD4835FVE-TL

Marking:DR;Package:VSOF5;High accuracy detection, Ultra-low current consumption

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

罗姆罗姆半导体集团

晶体管资料

  • 型号:

    DR42R2/126

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    300V

  • 最大电流允许值:

    1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    30W

  • 放大倍数:

  • 图片代号:

    B-45

  • vtest:

    300

  • htest:

    999900

  • atest:

    1

  • wtest:

    30

产品属性

  • 产品编号:

    DR

  • 制造商:

    Crouzet

  • 类别:

    工业自动化与控制 > 配件

  • 包装:

    散装

  • 描述:

    DIN RAIL 1 METER SECTION

供应商型号品牌批号封装库存备注价格
AO/万代
23+
SOP-8
69820
终端可以免费供样,支持BOM配单!
询价
23+
QFP
16567
正品:QQ;2987726803
询价
TOSHIBA/东芝
23+
SOT-563-6
6000
专注配单,只做原装进口现货
询价
TOSHIBA/东芝
23+
SOT-563-6
6000
专注配单,只做原装进口现货
询价
MAXIM(美信)
1711
?TSSOP-14
9000
华强原装现货
询价
LINEAR/凌特
24+
NA/
1000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
LINEAR
25+
QFN
1000
原装正品,假一罚十!
询价
24+
301
现货供应
询价
Opto 22
2022+
11
全新原装 货期两周
询价
TOSHIBA/东芝
NOTE4K416D20002(Y)360306064K41
TC7F00U 0805-5
1000
全新原装现货 样品可售
询价
更多DR供应商 更新时间2025-5-1 11:00:00