40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficienc

文件：623.35 Kbytes 页数：7 Pages

DIODES

美台半导体

40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Thermally Efficient Package-Cooler Running Applications  High Conversion Efficienc

文件：623.35 Kbytes 页数：7 Pages

DIODES

美台半导体

40V +175°C N-Channel Enhancement Mode MOSFET

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.\n\n

Diodes

美台半导体

40V +175°C N-Channel Enhancement Mode MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: engine management systems, body control electronics, and DC-DC converters.

Diodes

美台半导体