40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching, Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent QGD × RDS(ON) Product (FOM)

文件：513.94 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：HK8；Package：PowerDI3333-8；40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching, Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent QGD × RDS(ON) Product (FOM)

文件：513.94 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：HK8；Package：PowerDI3333-8；40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits  Rated to +175°C – Ideal for High Ambient Temperature Environments  100 Unclamped Inductive Switching, Test in Production – Ensures More Reliable and Robust End Application  Low RDS(ON) – Ensures On-State Losses are Minimized  Excellent QGD × RDS(ON) Product (FOM)

文件：513.94 Kbytes 页数：7 Pages

DIODES

美台半导体

40V 175℃ N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Rated to +175°C — Ideal for High Ambient Temperature Environments\n•100% Unclamped Inductive Switching, Test in Production — Ensures More Reliable and Robust End Application\n•Low RDS(ON) — Ensures On-State Losses are Minimized\n•Excellent QGD × RDS(ON) Product (FOM);

Diodes

美台半导体

40V 175?C N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Rated to +175°C – Ideal for High Ambient Temperature Environments\n•100% Unclamped Inductive Switching, Test in Production – Ensures More Reliable and Robust End Application\n•Low RDS(ON) – Ensures On-State Losses are Minimized\n•Excellent QGD × RDS(ON) Product (FOM)\n•Lead-Free Finish; RoHS Co;

Diodes

美台半导体