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DMP1011UCB9中文资料P-CHANNEL ENHANCEMENT MODE MOSFET数据手册Diodes规格书
DMP1011UCB9规格书详情
描述 Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.
特性 Features
LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.60mm for Low Profile
ESD = 6kV HBM Protection of Gate
应用 Application
DC-DC Converters
Battery Management
Load Switch
技术参数
- 制造商编号
：DMP1011UCB9
- 生产厂家
：Diodes
- Automotive Compliant PPAP
：No
- Polarity
：P
- ESD Diodes
：Yes
- VDS
：8 V
- VGS
：6 ±V
- IDS @ TA = +25°C
：10 A
- PD @ TA = +25°C
：1.57 W
- RDS(ON) Max @ VGS (10V)
：N/A mΩ
- RDS(ON) Max @ VGS (4.5V)
：10 mΩ
- RDS(ON) Max @ VGS (2.5V)
：14 mΩ
- RDS(ON) Max @ VGS (1.8V)
：N/A mΩ
- VGS (th) Max
：1.1 V
- QG Typ @ VGS = 4.5V (nC)
：8.1 nC
- QG Typ @ VGS = 10V (nC)
：N/A nC
- Packages
：U-WLB1515-9 (Type B)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
21+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
DIODES/美台 |
21+ |
U-WLB1515-9 |
8080 |
只做原装,质量保证 |
询价 | ||
DIODES |
23+ |
芯片 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
DIODES/美台 |
24+ |
WLB-9 |
28235 |
郑重承诺只做原装进口现货 |
询价 | ||
Diodes |
22+ |
9UFBGA WLBGA |
9000 |
原厂渠道,现货配单 |
询价 | ||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
DIODES(美台) |
2024+ |
500000 |
诚信服务,绝对原装原盘 |
询价 | |||
DIODES美台 |
23+ |
U-WLB1515-9 |
22820 |
原装正品，支持实单 |
询价 | ||
Diodes Incorporated |
2022+ |
9-UFBGA,WLBGA |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |
