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DMP1011UCB9数据手册Diodes中文资料规格书
DMP1011UCB9规格书详情
描述 Description
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.
特性 Features
LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.5mm × 1.5mm
Height = 0.60mm for Low Profile
ESD = 6kV HBM Protection of Gate
应用 Application
DC-DC Converters
Battery Management
Load Switch
技术参数
- 制造商编号
：DMP1011UCB9
- 生产厂家
：Diodes
- Automotive Compliant PPAP
：No
- Polarity
：P
- ESD Diodes
：Yes
- VDS
：8 V
- VGS
：6 ±V
- IDS @ TA = +25°C
：10 A
- PD @ TA = +25°C
：1.57 W
- RDS(ON) Max @ VGS (10V)
：N/A mΩ
- RDS(ON) Max @ VGS (4.5V)
：10 mΩ
- RDS(ON) Max @ VGS (2.5V)
：14 mΩ
- RDS(ON) Max @ VGS (1.8V)
：N/A mΩ
- VGS (th) Max
：1.1 V
- QG Typ @ VGS = 4.5V (nC)
：8.1 nC
- QG Typ @ VGS = 10V (nC)
：N/A nC
- Packages
：U-WLB1515-9 (Type B)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
23+ |
12000 |
原装正品现货,德为本,正为先,通天下! |
询价 | |||
DIODES |
21+ |
BGA |
53429 |
原装现货假一赔十 |
询价 | ||
DIODES |
23+ |
芯片 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
DIODES/美台 |
24+ |
U-WLB1515-9 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
DIODES |
23+ |
BGA |
104372 |
全新原装正品现货,支持订货 |
询价 | ||
DIODES/美台 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
DIODES(美台) |
24+ |
UWLB15159 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
询价 | ||
24+ |
N/A |
63000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
DIODES/美台 |
22+ |
U-WLB1515-9(TypeB) |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 |
