Low Gate Threshold Voltage

文件：265.04 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：265.04 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：265.04 Kbytes 页数：6 Pages

DIODES

美台半导体

Low Gate Threshold Voltage

文件：265.04 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：265.04 Kbytes 页数：6 Pages

DIODES

美台半导体

Low Gate Threshold Voltage

文件：265.04 Kbytes 页数：6 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：526.68 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET has been designed to minimize the on-state resistance\n\n\t(RDS(on)) and yet maintain superior switching performance, making it\n\n\tideal for high efficiency power management applications.

Diodes

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 0.6mm profile – Ideal for Low Profile Applications\nPCB Footprint of 4mm2\nLow Gate Threshold Voltage\nLow On-Resistance;

Diodes

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFT

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by aPPAP.

Diodes

美台半导体