N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 3.20mm × 2.10mm  Height = 0.120mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i

文件：571.08 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Diodes

美台半导体

丝印：J4；Package：X4-DSN3221-10；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  CSP with Footprint 3.20mm × 2.10mm  Height = 0.120mm (Typical) for Low Profile  ESD Protection of Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i

文件：571.08 Kbytes 页数：7 Pages

DIODES

美台半导体

X1-DFN1212-3

DIODES/美台

上传：深圳市纳睿斯电子科技有限公司

SOT-23

DIODES

美台半导体

上传：深圳市科芯源微电子有限公司