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DMN2008LFU中文资料DUAL N-CHANNEL ENHANCEMENT MODE MOSFET数据手册Diodes规格书
DMN2008LFU规格书详情
描述 Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
特性 Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
应用 Application
Power Management Functions
Battery Pack
Load Switch
技术参数
- 制造商编号
:DMN2008LFU
- 生产厂家
:Diodes
- Automotive Compliant PPAP
:No
- Polarity
:N+N
- ESD Diodes
:Yes
- VDS
:20 V
- VGS
:12 ±V
- IDS @ TA = +25°C
:14.5 A
- PD @ TA = +25°C
:1.7 W
- RDS(ON) Max @ VGS (10V)
:N/A mΩ
- RDS(ON) Max @ VGS (4.5V)
:5.4 mΩ
- RDS(ON) Max @ VGS (2.5V)
:9.6 mΩ
- RDS(ON) Max @ VGS (1.8V)
:N/A mΩ
- VGS (th) Max
:1.5 V
- QG Typ @ VGS = 4.5V (nC)
:18.7 nC
- QG Typ @ VGS = 10V (nC)
:42.3 nC
- Packages
:U-DFN2030-6 (Type B)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
46 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
DIODES(美台) |
24+ |
DFN6(2x3) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
DIODES/美台 |
2450+ |
DFN |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
DIODES |
18+ |
DFN |
149400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
询价 | ||
DIODES/美台 |
24+ |
U-DFN2030 |
10 |
100%原装正品现货,假一罚十 |
询价 | ||
Diodes |
22+ |
UDFN20306 (Type B) |
9000 |
原厂渠道,现货配单 |
询价 | ||
DIODES |
ROHS+Original |
U-DFN2030-6 |
25890 |
原装现货 库存特价/长期供应元器件代理经销 |
询价 | ||
DIODES/美台 |
22+ |
U-DFN2030-6(TypeB) |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 |