DMN2053UVTQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UVTQissuitableforautomotiveapplications requiringspecific

DMN2053UW

20VN-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFEThasbeendesignedtominimizetheon-stateresistance (RDS(ON))andyetmaintainsuperiorswitchingperformance,makingit idealforhighefficiencypowermanagementapplications. GeneralPurposeInterfacingSwitch PowerManagementFunctions DC-

DMN2053UWQ

20VN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMN2053UWQissuitableforautomotiveapplications requiringspecificchangecontrol;thispartis

ENA2053

LinearVibratorDriverIC

EPC2053

EnhancementModePowerTransistor

HAT2053M

SiliconNChannelPowerMOSFETPowerSwitching

HAT2053M

SiliconNChannelPowerMOSFETPowerSwitching

HAT2053M-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

IRS2053MPBF

3CHDigitalAudioAmplifier

ISG2053

FastIGBTinNPT-technology

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=3.6V@IC=2A ·HighCurrentCapability ·HighInputImpedance ·Lowthermalresistance APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter