DM800S12TDRB丝印代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
DM800S12TDRB	文件：741.64 Kbytes Page：10 Pages	丝印：DM800S12TDRB；Package：TO-247PLUS-4L；1200V/80mΩ SiC Mosfet without Diode General Description DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  Low RDS(on)  Low inductance case avoid oscillations  ROHS Typica 文件：741.64 Kbytes 页数：10 Pages	STARPOWER	STARPOWER
DM800S12TDRB	文件：741.64 Kbytes Page：10 Pages	丝印：DM800S12TDRB；Package：TO-247PLUS-4L；1200V/80mΩ SiC Mosfet without Diode General Description DOSEMI MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle. Features  SiC power MOSFET  Low RDS(on)  Low inductance case avoid oscillations  ROHS Typica 文件：741.64 Kbytes 页数：10 Pages	STARPOWER	STARPOWER

更多DM800S12TDRB供应商更新时间2025-9-21 14:07:00