丝印：DMA；Package：DO-214AA；11 To 170V 600W Surface Mount Transient Voltage Suppressors

Features Glass passivated chip 600W peak pulse power capability with a 10/1000μs waveform, repetitive rate (duty cycle):0.01% High reliability application and automotive grade AEC Q101 qualified Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response ti

文件：2.90188 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：DMA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：277.03 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：DMA；Package：DO-214AA；Surface Mount Transient Voltage Suppressors

文件：917.49 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：DMA30P1600HR；Package：ISO247；Phase leg

Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations

文件：407.04 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：DMA80I1600HA；Package：TO-247；Single Diode

Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● High commutation robustness ● High surge capability Applications: ● Diode for main rectification ● For single and three phase bridge configurations

文件：329.09 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：DMAA；Package：10Ld3x3DFN；Dual LDO with Low Noise, Very High PSRR and Low IQ

Dual LDO with Low Noise, Very High PSRR and Low IQ ISL9000 is a high performance dual LDO capable of sourcing 300mA current from each output. It has a low standby current and very high PSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. The device integrates an ind

文件：567.79 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：DMA30P1600HR；Package：ISO247；Phase leg

Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For single and three phase bridge configurations

文件：407.04 Kbytes 页数：5 Pages

IXYS

艾赛斯

丝印：DMA80I1600HA；Package：TO-247；Single Diode

Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● High commutation robustness ● High surge capability Applications: ● Diode for main rectification ● For single and three phase bridge configurations

文件：329.09 Kbytes 页数：5 Pages

IXYS

艾赛斯

Standard Rectifier Diode

DESCRIPTION ·Very low leakage current ·Very low forward voltage drop ·Isolation Voltage APPLICATIONS ·Diode for main rectification ·For single and three phase bridge configurations

文件：545.99 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type

Silicon PNP epitaxial planar type For digital circuits ■ Features • High forward current transfer ratio hFE with excellent linearity • Low collector-emitter saturation voltage VCE(sat) • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

文件：388.5 Kbytes 页数：4 Pages

Panasonic

松下